| 摘要 |
PURPOSE:To enable a film's thickness to be measured by fluorescent X-ray method by pouring a fixed amount of ion on silicon wafer surface in advance of piling of glass layer. CONSTITUTION:Ion is poured onto surface of a silicon wafer 1 on a fixed condition to form a layer 2 of an impurity such as argon, etc. A glass layer 3, which is an objective of measurement (of thickness), is piled on this impurity layer 2 using CVD or some other method. By radiation of a primary X-ray 4, a fluorescent X-ray 5 is excited at the ion-pouring layer 2. Now, it is possible to measure film thickness of the glass layer 3 by detecting amount of this fluorescent X-ray. |
