发明名称 |
Charge pump with controlled ramp rate |
摘要 |
A charge pump with controlled ramp rate (200) includes a charge pump (65), an RC differentiator circuit (258), and a trigger circuit (238). The charge pump (65) receives a clock signal and provides a high output voltage for programming and erasing an EEPROM. The RC differentiator circuit (258) provides a control voltage that is proportional to the ramp-up rate of the high output voltage. The trigger circuit (238) receives the control voltage, and provides a control signal to disable the charge pump (65) if the ramp-up rate exceeds a predetermined rate. When the ramp-up rate falls below the predetermined rate, the trigger circuit (238) provides a control signal to enable the charge pump (65). The trigger circuit (238) has hysteresis to regulate its switching point. Controlling the ramp-up rate of the output voltage reduces the peak tunneling current in the EEPROM cell to increase reliability.
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申请公布号 |
US5365121(A) |
申请公布日期 |
1994.11.15 |
申请号 |
US19930028006 |
申请日期 |
1993.03.08 |
申请人 |
MOTOROLA INC. |
发明人 |
MORTON, BRUCE L.;CHRUDIMSKY, DAVID W. |
分类号 |
G11C17/00;G11C5/14;G11C16/06;G11C16/12;G11C16/30;H02M3/07;H03L7/093;(IPC1-7):H03G11/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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