| 摘要 |
PURPOSE: To disclose a method for manufacturing semiconductors that can be applied to form the contact of a source and a drain, especially, in the application to an SRAM. CONSTITUTION: For example, a dielectric 127 and, for example, a polysilicon conductor 131 lying on it are formed and patterned, so that, for example, a semiconductor substrate 123 is exposed. For example, a silicide layer 132 is deposited, thus causing, for example, a polysilicon layer 131 to contact, for example, the substrate 123. An electrical contact between, for example, the polysilicon layer 131 and the substrate can be provided without any risk for trenching into, for example, the substrate 123 by the succeeding patterning of, for example, the silicide layer 132 using an oxide hard mask. |
