| 摘要 |
PURPOSE:To provide structure of a semiconductor device and its manufacturing method, especially the structure of a buried-channel-type MOS transistor and its manufacturing method. CONSTITUTION:This semiconductor device has a feature that the impurity concentration on the surface of a silicon substrate under an end part is thinner than that under the central part of a gate electrode, and it has a structure in which a P-type (or an N-type) diffused layer thinner than a P-type impurity diffused layer 4 is provided on the surface of an N-type silicon substrate 1 under an end of a gate electrode 5 as shown in process E in the Figure. Consequently, a short-channel effect which has caused a problem in conventional cases is hard to produce, and a MOS transistor can be made much finer. In addition, the degradation of the MOS transistor due to hot electrons which have caused a problem in conventional cases in the same manner can be suppressed, and the MOS transistor of high reliability can be manufactured.
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