| 摘要 |
A support and positioning apparatus (10) for supporting and positioning a wafer (12), substrate or the like in a plasma assisted chemical etching process. Surround components (14, 16, 18, 20) positioned around the substrate (12) are comprised of substantially pure magnesium or are aluminum coated with a magnesium fluoride coating such that as a plasma tool associated with the plasma etching process traverses the edge of the substrate (12), the plasma etching environment generated from a fluorine containing feed gas emitted from the plasma tool does not significantly erode the surround components (14, 16, 18, 20) or cause contamination of the substrate (12).
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