发明名称 |
Process for non-selectively forming deposition film on a non-electron-donative surface |
摘要 |
A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450 DEG C.
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申请公布号 |
US5364664(A) |
申请公布日期 |
1994.11.15 |
申请号 |
US19920996875 |
申请日期 |
1992.12.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TSUBOUCHI, KAZUO;MASU, KAZUYA |
分类号 |
C23C16/02;C23C16/20;C30B25/04;H01L21/205;H01L21/28;H01L21/285;H01L21/306;H01L21/3205;H01L21/768;(IPC1-7):B05D3/06;B05D3/00;C23C16/00 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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