| 摘要 |
<p>PURPOSE:To inspect the electrical characteristic while the ends of a matrix wiring are connected with a low-resistance wiring and to prevent the trouble such as the dielectric breakdown and the deterioration of an active device by arranging an appropriate element in the mid-way of the low-resistance wiring connecting the matrix wirings. CONSTITUTION:A TFT is formed at a cross between a gate signal wiring 101 and a source signal wiring 102. Inspection electrode terminals 103a and 113a on the gate side, inspection electrode terminals 104a and 114a on the source side and the low-resistance wirings (short ring) 105a and 105b and a transistor 106 for short-circuiting one ends of all the source signal wirings and one ends of all the gate signal wirings are provided. The source 106a and drain 106b of the transistor 106 are connected respectively to the low-resistance wirings 105b and 105a, the gate 106c is connected to one electrode of a switching capacity 107 with the other electrode grounded, and an electrode terminal 108 is connected to the node to charge the capacity 107.</p> |
