| 摘要 |
<p>PURPOSE: To prevent a cooling gas from being broken by an arc discharge or a glow discharge by forming at least one conduit inside a metal stand and transferring a cooling gas to at least one cavity directly below a dielectric layer. CONSTITUTION: An electrostatic chuck 10 supports a semiconductor wafer to be treated and is applied to a pad base 14 in a high-density plasma reaction room for retaining electrostatically. A pattern 18 consisting of gas supply grooves 56a and 56b is formed on an upper surface 54 to supply a cooling gas from a feed hole 58 to the entire upper surface 54 of a dielectric layer 44. When a semiconductor substrate is placed on the electrostatic chuck 10, the cooling gas passes through a conduit 48, the feed hole 58, and the supply groove 18 and flows through a small gap between the lower side of the substrate and an upper surface 54 of the dielectric layer 44. A top surface 40 of the pad base 14 is smooth and the gas supply grooves 56a and 56b are formed not on the metal pad base but on the dielectric layer 44, thus minimizing the discontinuity of the electric field for generating an arc on the electrostatic chuck 10.</p> |
