| 摘要 |
PURPOSE:To obtain an excellent polishing material cutting material or semiconductor material by forming a polycrystalline BCN substance with fine particles having a diamond type crystal structure consisting essentially of boron (B), carbon(C) and nitrogen(N). CONSTITUTION:Boron trichloride, acetylene and ammonia are treated at a high temp. to obtain a graphitic substance or a substance analogous to graphite having about 1.0:1.3:1.0 ratio of B:C:N. This substance is mixed with flaky copper powder, etc., and presscompacted. Dynamic pressure of 20-70 GPa is then applied to the resultant compact in a plane impact compressing device, etc., to produce the objective polycrystalline BCN substance having a compsn. represented by the formula (where x=1, 0.1<=y<=10 and z=1) and 10-1,000Angstrom size of fine particles having a diamond type crystal structure as the principal component. |
