| 摘要 |
PURPOSE:To enable the luminescence to be rapidly switched by a method wherein the first conductivity type InP layer, an InGaAs layer to be a barrier layer, another Inp layer to be a quantum well layer and the second conductivity type InGaAs layer are successively laminated. CONSTITUTION:The first conductivity type InP layer 2 and an In0.52Ga0.48-xAlxAs layer (0<=x<=0.48) 5 to be a barrier layer are successively laminated on the first conductivity type InP substrate 1. Next, when this optical element is impressed with a forward voltage, an InP quantum well layer 4 is implanted with electrons by resonance tunnel effect to be recoupled with the hole of the p type InAlAs layer 5 through the intermediary of the quantum level. At this time, the electronic concentration in the InP quantum well layer 4 can respond to the impressed voltage very rapidly thereby enabling the luminescence to be rapidly switched. |
