| 摘要 |
PURPOSE: To obtain a driving circuit for field effect transistor suitable for being used at an upper stage of a half-bridge configuration, capable of being operated with a high switching rate in which no cross current appears and providing extremely high output impedance. CONSTITUTION: A first transistor M1 is connected between a gate terminal of the field effect transistor MFET1 and an negative pole GND of a voltage supply generator to turn off gate voltage of the MFET1 and the transistor M1 is driven by operational amplifiers connected to the gate terminal, a source terminal respectively by an inverted input terminal, non-inverted input terminal. Each of the MFET1 is connected with other power source M1 by switches S1, S2. |
