| 摘要 |
A semiconductor integrated circuit device comprises a plurality of peripheral power supply lines extending along the periphery of an internal circuit region formed in a semiconductor chip. Bonding pads are arranged outside of the peripheral power supply lines, wherein the wiring layers used in the peripheral power supply line arranged at the outermost periphery are made less by one than those used in the inner peripheral power supply line adjacent to the outermost peripheral power supply line. Reduced wiring layers are formed with power leading lines for connecting the inner peripheral power supply line and the bonding pads. Moreover, the power leading lines for connecting the outermost peripheral power supply lines and the bonding pads are formed of the same wiring layer as that of the outermost peripheral power supply line. The semiconductor integrated circuit device is further constructed such that there are arranged along the peripheral of the internal circuit region a plurality of I/O cells and high drive power output buffer circuits which include two or more adjacent ones of the plurality of I/O cells and which are adapted to be fed with the supply voltages from the peripheral power supply lines. Moreover, predetermined ones of external terminals assigned to the plurality of I/O cells constituting the high drive power output buffer circuits are used as terminals for feeding the supply voltages to the plurality of peripheral power supply lines.
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