发明名称 PROCESS FOR FORMING DEPOSITED FILM
摘要 A process for forming a deposited film comprises: (a) the step of arranging a substrate having a portion comprising a material which becomes the crystal nucleus for formation of a deposited film or a material capable of forming selectively said crystal nucleus into a film forming space for formation of a deposited film; (b) the film forming step of introducing an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween and form a deposited film on said substrate; (c) the step of exposing the deposited film growth surface to a gaseous substance having etching action on the deposited film to be formed during the film forming step to apply etching action on said deposited film growth surface, therety effecting preferentially crystal growth in a specific face direction.
申请公布号 CA1333040(C) 申请公布日期 1994.11.15
申请号 CA19870534412 申请日期 1987.04.10
申请人 CANON KABUSHIKI KAISHA;CANON KABUSHIKI KAISHA 发明人 HIRAI, YUTAKA;HIRAI, YUTAKA
分类号 C23C16/24;C23C16/452;H01L21/20;H01L21/205;(IPC1-7):H01L21/205;C30B33/08 主分类号 C23C16/24
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