| 摘要 |
PURPOSE:To provide a semiconductor device having a wiring structure which can suppress an increase in the delay time in a wiring passing a memory cell region even when a cell size is made small. CONSTITUTION:Wirings 3, 7 provided with a prescribed length are formed on a semiconductor substrate 10. A wiring 1 whose length is longer than that of those wirings is formed on the wirings via a layer insulating film 14, and the width of the wiring 1 is made large. Since the wiring resistance becomes low, the delay time of each wiring can be made effectively small. This semiconductor device is used as a semiconductor memory which selects a cell by a hierarchical structure of a dual line system or the like. |
