Method of manufacturing X-ray exposure mask

摘要

The present invention relates to a method of manufacturing an exposure mask having an unprecedented supermicrostructure for an X-ray exposure method favorable for conventional supermicro exposure using lithography techniques. The method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of compound semiconductors as a thin film having a periodic structure with controllability of about one atomic layer on a substrate selectively etching only one material for forming the periodic structure, forming an uneven difference between adjacent layers of the laminate body, and manufacturing a mask for exposing streaks on a desired resist with the aid of a difference of X-rays absorption amounts between each layer by exposing X-ray in parallel to the direction of the laminate layer.