| 摘要 |
<p>PURPOSE:To make a read speed high by rising and breaking rapidly the level change on a digit line by using a delay circuit to delay the operation of a feedback transistor. CONSTITUTION:Output terminal t is connected to read common line L1, by which the output of a selected memory cell is led out, through transistor TRQ3. Meanwhile, line L1 is connected to inverter INV1, and the output side is connected to feedback TRQ6 through a delay circuit, for example, resistive delay circuit R. Then, line L1 is connected to TRQ6 through INV2. By this constitution, the operation of TRQ6 can be delayed by a fixed time by delay circuit 6 at a level inversion time of line L1, so that the level change on the digit line can be risen and broken rapidly. As a result, the read speed can be made high.</p> |
