| 摘要 |
PURPOSE:To obtain an X-ray mask durable for formation of a pattern without loss of intensity of X-ray due to absorption by providing a mask pattern made of first and second monochromatic crystals for converting incident lights to monochromatic color and written on any one crystal. CONSTITUTION:A mask pattern 14 made of first and second monochromatic crystals 12 and 13 for converting an incident light 11 into monochromatic color and written on any one crystal is provided. For example, the light 11 radiated from a synchrotron 10 is incident to the second crystal 13 through the first crystal 12. In this case, since the pattern 14 is formed on the crystal 13, its emitting light 17 can write a circuit pattern on a wafer. The crystal 13 can be replaced with a second monochromatic crystal 15 written with a mask pattern 16 of next step by moving along the moving direction 18 of the second crystal, and patterns can be sequentially superposed in this manner. |
