发明名称 METHOD OF MAKING FIELD EMISSION TIPS USING PHYSICAL VAPOR DEPOSITION OF RANDOM NUCLEI AS ETCH MASK
摘要 A method of making sub-micron low work function field emission tips (32, 66) without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask (20, 50). In one embodiment an etch is applied to low work function material (14) covered by randomly located nuclei to form emission tips (32) in the low work function material (14). In another embodiment an etch is applied to base material (44) covered by randomly located nuclei to form tips (58) in the base material (44) which are then coated with low work function material (60) to form emission tips (66). Diamond is the preferred low work function material (14, 60).
申请公布号 WO9425976(A1) 申请公布日期 1994.11.10
申请号 WO1994US04568 申请日期 1994.04.22
申请人 MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATI;SI DIAMOND TECHNOLOGY, INCORPORATED;KUMAR, NALIN 发明人 KUMAR, NALIN
分类号 H01J9/02;H05K3/00;(IPC1-7):H01J9/00 主分类号 H01J9/02
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