发明名称 |
METHOD OF MAKING FIELD EMISSION TIPS USING PHYSICAL VAPOR DEPOSITION OF RANDOM NUCLEI AS ETCH MASK |
摘要 |
A method of making sub-micron low work function field emission tips (32, 66) without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask (20, 50). In one embodiment an etch is applied to low work function material (14) covered by randomly located nuclei to form emission tips (32) in the low work function material (14). In another embodiment an etch is applied to base material (44) covered by randomly located nuclei to form tips (58) in the base material (44) which are then coated with low work function material (60) to form emission tips (66). Diamond is the preferred low work function material (14, 60). |
申请公布号 |
WO9425976(A1) |
申请公布日期 |
1994.11.10 |
申请号 |
WO1994US04568 |
申请日期 |
1994.04.22 |
申请人 |
MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATI;SI DIAMOND TECHNOLOGY, INCORPORATED;KUMAR, NALIN |
发明人 |
KUMAR, NALIN |
分类号 |
H01J9/02;H05K3/00;(IPC1-7):H01J9/00 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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