| 发明名称 |
Process for etching insulation and buffer layers arranged on a semiconductor substrate |
| 摘要 |
The invention relates to a process for etching insulation and buffer layers arranged on a semiconductor substrate, in which the etching process is carried out in a gas mixture comprising a halogenated hydrocarbon, oxygen, halogen, aliphatic alcohol and inert gas, preferably CF4/O2/Cl2/CH3OH/N2, in three steps.
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| 申请公布号 |
DE4315435(A1) |
申请公布日期 |
1994.11.10 |
| 申请号 |
DE19934315435 |
申请日期 |
1993.05.08 |
| 申请人 |
DEUTSCHE ITT INDUSTRIES GMBH, 79108 FREIBURG, DE |
发明人 |
NAGEL, JUERGEN, DIPL.-PHYS., 7800 FREIBURG, DE |
| 分类号 |
H01L21/311;H01L21/32;(IPC1-7):H01L21/76;C23F4/00;H01L21/306;H01L21/316 |
主分类号 |
H01L21/311 |
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