| 摘要 |
<p>A positive electron-beam resist composition comprising a cresol novolak resin, a low-molecular additive with a specified structure, and a quinone diazide compound with a specified structure; and a developer for positive electron-beam resist containing an alkali metal ion, a weak acid radical ion, and a water-soluble organic compound each in a specified amount. The invention resist composition is excellent in dry etching resistance and resolution, and can provide fine patterns at a high sensitivity especially when the invention developer is used.</p> |
