A preparation method of selective growth silicon layer doped with impurities.

摘要

A semiconductor substrate (31) having a surface region of P type and a surface region of N type is formed, then an insulating membrane is formed on the semiconductor substrate (31). The first contact hole which is formed in said region of P type and the second contact hole which is connected to said region of n type are formed by the same process to said insulating membrane. Non-doped silicon layer is grown in said first and second contact holes (35) by the same selective growth process, in a single reactive furnace. A diffuse source layer (37) containing impurities of P type is formed on said first contact hole and a diffuse source layer containing impurities of N type on said second contact hole. Impurities are diffused from said diffuse layers (37, 38) to said silicon layers (36), and said diffuse source layer is then removed. A metal wire layer is formed by connecting it to said silicon layer.