| 摘要 |
<p>A thin-film capacitor according to the invention comprises a substrate (1), a lower electrode (3), a dielectric (4), and an upper electrode (5) in the structure stacked in sequence from bottom to top. The lower electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhenium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.</p> |
