| 摘要 |
PURPOSE:To prevent a write disturbance generated when an information is written in a nonvolatile storage element, by providing a sidewall on a partial region of its channel region which is formed in a stuck way to the respective one-ends of its tunnel insulation film, its floating gate, its capacitor insulation film and its control gate which exist all on the side of, its source region. CONSTITUTION:A nonvolatile storage element has a sidewall 39 formed on a partial region of a channel region 30a. The sidewall 39 is made of such a dielectric film as SiO2, and is stuck to the respective one-ends of a tunnel oxide film 31, a floating gate 32, a capacitor insulation film 33 and a control gate 34 which exist all on the side of a source region 30b. By the thickness of the laminar dielectrics comprising the tunnel insulation film 31- the control gate 34, the width of the sidewall 39 is controlled. Also, the sidewall 39 and the laminar dielectrics are covered with an interlayer insulation film 36, and the floating gate 32 is not connected with the outside. In the opposite part of the interlayer insulation film 36 to a drain region 30c, a contact hole 37 is bored, and therethrough, the drain region 30c is contacted with a bit line 38 made of Al-Si, etc. |
