| 摘要 |
PURPOSE:To improve the curve factor without reducing the short circuit current by a method wherein a p-type layer of amorphous silicon carbide is formed and the surface undergoes the plasma treatment with a p-type dopant gas containing boron to form a transparent electrode. CONSTITUTION:A photo-voltaic device 10 contains a substrate 12 consisting of a glass ceramics, etc., an a first electrode 14 such as aluminum or silver is formed on that substrate 12. An n-type layer which is an amorphous semiconductor film 16, i-type layer, and p-type layer are formed on the first electrode 14. The surface of the p-type layer is plasma-treated to form a transparent electrode 18 on the p-type layer. Thus, it is possible to improve the curve factor without reducing the shortcircuit current, thereby making it possible to apply it to all the photo-voltaic elements where a-SiC and the transparent electrode 18 are joined. |
