| 摘要 |
PURPOSE:To achieve a gas sensor which can be formed into a multi-sensor easily, can be machined easily and is suited for mass production, is inexpensive, and can be handled easily. CONSTITUTION:In a basic configuration of MIS(Metal-Insulator-Semiconductor) of a detection electrode 1, a gas-sensitive layer 3, an insulation layer 4, and a semiconductor 5 where the insulation layer 4 is provided on the semiconductor 5 and the gas-sensitive layer 3 is provided on it or in a basic configuration of MS(Metal-Semiconductor) of the detection electrode 1, the gas-sensitive layer 3, and the semiconductor 5, a depletion layer or an inverted layer is provided on the insulation layer 4, the interface of the semiconductor 5, or the surface of the semiconductor 5. Intermittent light 6 is applied from the front or rear surface of the semiconductor 5 and then the photo carriers of electron and positive hole pairs are generated inside the semiconductor, thus generating the AC surface photo voltage on the depletion layer or the inverted layer near the surface of the semiconductor 5. In this system, connection is made by capacity coupling without any contact with a sensor for detecting the potential change of the gas-sensitive film according to gas concentration and then the change in surface photo voltage. |
