发明名称 MANUFACTURE OF INTEGRATED CIRCUIT
摘要 PURPOSE:To replace a defective block with a non-defective block dispensing with a block selecting circuit and to improve an integrated circuit in yield by a method wherein a temporary wiring is removed after various blocks are tested, and an actual wiring is formed. CONSTITUTION:Semiconductor elements such as MOS transistors which form circuit blocks are manufactured in a first process 1 through conventional integrated circuit manufacturing treatments such as photolithography, impurity diffusion, ion implantation, and the like, and circuit blocks are connected together through a temporary wiring (one or more layers of conductor wiring) in a second process 2. The circuit blocks are subjected to a performance test in a third process 3, the temporary wiring is removed in a fourth process 4, and only normal circuit blocks are connected together through an actual wiring (one or more layers of conductor wiring) in a fifth process 5 avoiding defective blocks found in a block operation test. Therefore, an integrated circuit, can be improved in yield without increasing it in scale and operating delay time.
申请公布号 JPH06314743(A) 申请公布日期 1994.11.08
申请号 JP19930221697 申请日期 1993.09.07
申请人 HITACHI LTD 发明人 OKUBO MICHIO;SUZUKI MAKOTO;SASAKI KATSURO;HONMA YOSHIO
分类号 H01L21/82;H01L21/66;(IPC1-7):H01L21/82 主分类号 H01L21/82
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