发明名称 |
Method of manufacturing a semiconductor light emitting device |
摘要 |
A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.
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申请公布号 |
US5362673(A) |
申请公布日期 |
1994.11.08 |
申请号 |
US19930164066 |
申请日期 |
1993.12.07 |
申请人 |
RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO., LTD. |
发明人 |
IECHI, HIROYUKI |
分类号 |
H01L27/15;H01L33/20;H01S5/02;H01S5/40;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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