发明名称 Method of manufacturing a semiconductor light emitting device
摘要 A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.
申请公布号 US5362673(A) 申请公布日期 1994.11.08
申请号 US19930164066 申请日期 1993.12.07
申请人 RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO., LTD. 发明人 IECHI, HIROYUKI
分类号 H01L27/15;H01L33/20;H01S5/02;H01S5/40;(IPC1-7):H01L21/20 主分类号 H01L27/15
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