| 摘要 |
PURPOSE:To improve photosensitivity a light emitting diode when functioning as a photodetector. CONSTITUTION:A light emitting and receiving region 40 is made a region for one picture element, and a shallow p-n junction 40a having a light receiving function and a deep p-n junction 40b having a light emitting function are provided to the region 40 in mutual contact. The shallow p-n junction 40a is provided by snaking to a periphery of the light emitting and receiving region 40. Since an area of the shallow p-n junction 40a in the light emitting and receiving region 40 for one picture element is thereby increased, the purpose can be attained. When the p-n junctions 40a, 40b are formed, a layer insulation film 46 which also functions as a diffusion mask is formed on a first semiconductor layer 42 and a window 46a whose periphery snakes is formed in the film 46. A second semiconductor layer 44 is formed in the first semiconductor layer 42 by thermally diffusing impurities through the window 46a. Since impurities are diffused also in a direction along a surface of the first semiconductor layer 42, a snaking shallow p-n junction is formed below the layer insulating film 46 of a window periphery. |
