| 摘要 |
<p>PURPOSE:To obtain the title apparatus wherein a sufficient soaking operation is obtained, a semiconductor wafer is hardly contaminated and a leakage current is extremely small as well as a mechanical property, a sliding and moving characteristic and the like are excellent by a method wherein the mounting face of the semiconductor wafer is formed on the surface of a sheetlike body in which a heating resistor has been incorporated and which is made of single- crystal sapphire. CONSTITUTION:The mounting face 1a of a semiconductor wafer 6 is formed on the surface of a sheetlike body 1 in which a heating resistor 2 has been incorporated and which is made of single-crystal sapphire. For example, the back of a sheetlike body 1 which is composed of single-crystal sapphire is provided with a heating resistor 2, and the sheetllke body 1 is bonded to a base plate 4 so as to cover the heating resistor 2. The base plate 4 is formed of single-crystal sapphire or a polycrystalline alumina ceramic, and the base plate 4 is used after it has been fixed to a pedestal 5 made of aluminum or the like. W, Pt, Ni, Cr, TiN or their mixture is used as the material of the heating resistor 2, and the heating resistor 2 is formed to be a prescribed pattern by a metallizing method or the like.</p> |
