发明名称 |
Photolithography exposure tool and method for in situ photoresist measurments and exposure control |
摘要 |
An apparatus and method is provided for measuring photoresist parameters in situ is disclosed. Transmission and reflectivity detectors are used in a lithographic exposure tool to obtain in situ absorption parameters and reflectivity data. The absorption parameters and reflectivity data are used in a feedback control system that controls the exposure dose used in the lithographic tool.
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申请公布号 |
US5363171(A) |
申请公布日期 |
1994.11.08 |
申请号 |
US19930098914 |
申请日期 |
1993.07.29 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE DIRECTOR, NATIONAL SECURITY AGENCY |
发明人 |
MACK, CHRIS A. |
分类号 |
G03F7/20;(IPC1-7):G03B27/74;G03B27/80;G03B27/42 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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