发明名称 Photolithography exposure tool and method for in situ photoresist measurments and exposure control
摘要 An apparatus and method is provided for measuring photoresist parameters in situ is disclosed. Transmission and reflectivity detectors are used in a lithographic exposure tool to obtain in situ absorption parameters and reflectivity data. The absorption parameters and reflectivity data are used in a feedback control system that controls the exposure dose used in the lithographic tool.
申请公布号 US5363171(A) 申请公布日期 1994.11.08
申请号 US19930098914 申请日期 1993.07.29
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE DIRECTOR, NATIONAL SECURITY AGENCY 发明人 MACK, CHRIS A.
分类号 G03F7/20;(IPC1-7):G03B27/74;G03B27/80;G03B27/42 主分类号 G03F7/20
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