Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.
申请公布号
US5362667(A)
申请公布日期
1994.11.08
申请号
US19920921197
申请日期
1992.07.28
申请人
HARRIS CORPORATION
发明人
LINN, JACK H.;LOWRY, ROBERT K.;ROUSE, GEORGE V.;BULLER, JAMES F.;SPEECE, WILLIAM H.