| 摘要 |
PURPOSE:To form a modulated dope type structure, having a sharp sawtooth cross section, formed only by GaAs/AlGaAs ultimately. CONSTITUTION:A substrate is incliningly provided against a molecular beam source 100. Crystal is grown by MBE; GaAs layers 12a to 12g in uniform thickness are grown on one side face only of sawtooth (triangle). The substrate is inclined to opposite to the above-mentioned side against the molecular beam source, and a GaAs layer is grown again. The same process is repeated when an AlGaAs layer is grown. As a result, the fluctuation of the path of a charge carrier (electrons, etc.) can be suppressed one-dimentionary, the density of the channel carrier can be improved, and high frequency noise can be reduced. |
