Surface emitting semiconductor laser

摘要

A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy DELTA Ec of conduction band discontinuity is higher than the energy DELTA Ev of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy DELTA Ev of valence band discontinuity is higher than the energy DELTA Ec of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.