| 摘要 |
PURPOSE:To provide the semiconductor device of a high-reliability multilayer interconnection structure wherein a fine contact can be formed and a connection defect or the like is not caused even when a contact part is made fine. CONSTITUTION:A semiconductor device is provided with a multilayer interconnection structure wherein a lower-part conductive layer 22b and an upper-part conductive layer 34 are connected via a pillar connection part 26b. The lower- part conductive layer 22b is provided with a pattern decided by the sum of a first pattern for an auxiliary conductive layer 24a formed on it and of a second pattern for the pillar connection part 26b. An interlayer insulating film 32 is formed on the surface of the pillar connection part 26b and of the lower- part conductive layer 22b on which the auxiliary conductive layer 24a has been formed, and the interlayer insulating layer 32 is removed selectively in such a way that the upper end part of the pillar connection part 26b is exposed. After that, the upper-part conductive layer 34 is formed on the surface of the interlayer insulating film 32, and the upper-part conductive layer 34 is connected to the lower-part conductive layer 22b through the pillar connection part 26b. |
