| 摘要 |
PURPOSE:To enable a power semiconductor element to be enhanced in moisture resistance and improved in reliability by a method wherein a metal frame bonded to an outer case which surrounds the periphery of a metal plate is provided inside the outer case, and only the metal frame is filled with distortion buffer agent, and the semiconductor element is buried in the agent. CONSTITUTION:In a power semiconductor molded module, a metal frame 12 bonded to a metal plate 8 is proved inside an cuter case 10. A semiconductor element 5 is placed on the metal plate 8 inside the 12, and distortion buffer agent 11 is filled into only the metal frame 12. An insulating plate 1 is interposed between the metal plate 8 and the semiconductor element 5. In such a structure, even if moisture penetrates through the bonded surface of the outer case 10 with the metal plate 8, outer moisture is prevented from reaching directly to the moisture-permeable distortion buffer agent 11 because the metal frame 12 is joined to the metal plate 8, and moisture hardly penetrates in the vicinity of the element. Moreover, a distance between the outer case 10 and the distortion buffer agent 11 is much longer than usual, the effect of moisture on the element in electrical properties can be almost completely eliminated.
|
