Method of forming a monocrystalline film having a closed loop step portion on the substrate

摘要

PCT No. PCT/JP89/00599 Sec. 371 Date Feb. 1, 1990 Sec. 102(e) Date Feb. 1, 1990 PCT Filed Jun. 15, 1989 PCT Pub. No. WO89/12908 PCT Pub. Date Dec. 28, 1989.A method of manufacturing a semiconductor device, and particularly a method of forming a monocrystalline film on a substrate. The method includes the step of forming a conductor layer having a step portion on the surface of a substrate. The step portion includes a lateral face which surrounds the lower surface of the step portion to form a closed loop. After the conductor layer has been formed on the surface of the substrate, a monocrystalline film is formed directly on the substrate. Specifically, the film is formed on the lower surface of the step portion, while a DC potential is applied to the conductor layer.