| 摘要 |
PURPOSE:To restrain the side face of a lower electrode from being oxidized and to lessen the coupling capacitance between adjacent capacitors. CONSTITUTION:A lower electrode 402, a dielectric body 403 of high dielectric constant, and an upper electrode 404 are successively laminated on a board 401 for the formation of a thin film capacitor, wherein the periphery of the lower electrode is so covered with an interlayer insulating film 405 as to enable the surface of the lower electrode of a required shape to be exposed, and the interlayer insulating film 405 is formed of silicon nitride. The above thin film capacitors are disposed on a board for the formation of thin film capacitor integrated circuit. |
