FORMATION OF P-TYPE GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To acquire a p-type layer of low resistance by realizing a low resistance of a gallium nitride compound semiconductor layer doped with a p-type dopant and by making it uniform in a depth direction by selective formation. CONSTITUTION:After a protective film is selectively formed in a surface of a gallium nitride compound semiconductor layer doped with p-type dopant, the gallium nitride compound semiconductor layer is annealed at 400 deg.C or higher to realize a low resistance, and a difference of resistivity is provided to the same gallium nitride compound semiconductor layer.