发明名称 |
Planarized magnetoresistive sensor |
摘要 |
A magnetoresistive sensor includes a track width oxide layer which overlies a magnetoresistive element. Etch stop layers lie on opposite sides of the magnetoresistive element adjacent a magnetoresistive element. Contact/boundary control layers overlie the etch stop layer and lie adjacent the track width oxide layer. A separate loft oxide layer overlies the contact/boundary control layers and the track width oxide layer. The magnetoresistive sensor is formed by depositing a track width oxide to a thickness of the contact/boundary control layers.
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申请公布号 |
US5363265(A) |
申请公布日期 |
1994.11.08 |
申请号 |
US19930094496 |
申请日期 |
1993.07.19 |
申请人 |
SEAGATE TECHNOLOGY, INC. |
发明人 |
HSIE, WEI C.;COLLVER, MICHAEL M. |
分类号 |
G11B5/39;(IPC1-7):G11B5/127;G11B5/33 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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