| 摘要 |
PURPOSE:To surely perform ROM programming by shortening TAT and by diminishing the variation of an ion implantation rate. CONSTITUTION:Program holes 28 leaving an interlaminar film 21 with thin film thickness on transistors 16, 17 for all memory cells are opened simultaneously with opening of a through hole 27, Then, simultaneously with forming of Al wiring 31. Al layer 32 is formed on a transistor 17, in which no data are written, and boron 33 is ion-implanted in the whole surface while the Al layer 32 and interlaminar films 21, 25 are used as masks. Consequently, a program can be started from a state where the AR wiring 31 and Al film for the Al layer 32 are formed on the whole surface, and the film thickness of the interlaminar film 21 to be penetrated by ion implantation is also thin. |
