| 摘要 |
PURPOSE:To provide a semiconductor memory having a redundant cell which has a lower defective rate than a main body cell. CONSTITUTION:A contact section 1' to connect a source side of a main body cell 3 and a bit line 1 and a contact section 6' to connect a source side of a redundant cell 8 and a bit line 6 are different in the design size. The length of one side of the contact section (contact hole) 1' of the main body cell 3 is, for example, 0.8mum while that of the contact section (contact hole) 6' of the redundant cell 8 is, for example, 1.0mum. Therefore, the contact section 6' has a larger space for fine processing than the contact section 1' and so, a defective rate of the redundant cell 8 is lower than that of the main body cell 3. When the main body cell 3 has a defect, the main body cell 3 can be replaced with the redundant cell 8 of a lower defective rate. Thus, the back-up for the main body cell 3 can be done effectively with the redundant cell. |
