| 摘要 |
PURPOSE:To make it possible to manufacture a target II-VI compound semiconductor element reliably and stably by a method wherein a treatment temperature accompanied by a heating in a process of manufacturing the II-VI compound semiconductor element is selected at a specified or lower temperature. CONSTITUTION:A first clad layer 2 consisting of a ZnMgSSe layer of the same conductivity type as that of a first conductivity type substrate 1, an active layer 3 consisting of an undoped or low-impurity concentration Zn(Cd)Se layer, a second clad layer 4 consisting of a second conductivity type ZnMgSSe layer and a cap layer 5 consisting of a superlattice structure, which consists of a thin ZnSe layer and a thin ZnTe layer, are epitaxially grown in order on the first conductivity type substrate 1, such as a GaAs substrate, by an MBE method. In this case, a heating treatment temperature accompanied by the manufacture of a laser is restricted to 400 deg.C or lower. The blue light laser obtained in such a way can be formed in prescribed characteristics stably and reliably. |
