发明名称 FORMATION OF PHASE SHIFT EXPOSING MASK, PHASE SHIFT EXPOSING MASK AND PHASE SHIFT EXPOSING METHOD
摘要 PURPOSE:To provide a method for formation of the phase shift exposing mask which is improved in a light intensity distribution by removing the parts (sub- peaks) where the light intensity considered to be caused by interference of transmitted light between light transparent parts, such as hole patterns, increases, the phase shift exposing mask and the phase shift exposing method. CONSTITUTION:The patterns 3a, 3b (microapeture patterns, translucent patterns varying in phases, light shielding patterns, etc.) which decrease the sub-peaks generated by the interference of light are formed on the phase shift exposing mask having the light transparent parts 1a, 1b transparent to exposing light and the translucent parts 2 which in low in transmittance with respect to the light transparent parts and allow the transmission of the exposing light by varying the phase from the phase of the light transparent parts.
申请公布号 JPH06308715(A) 申请公布日期 1994.11.04
申请号 JP19930123317 申请日期 1993.04.27
申请人 SONY CORP 发明人 SHIMIZU HIDEO
分类号 G03F1/29;G03F1/32;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/29
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