| 摘要 |
<p>PURPOSE: To provide a method for manufacturing a metal plug having a flat surface capable of preventing a consumed reaction of a junction with a substrate surface upon a lower part of a high integration semiconductor device and an upper wiring layer being connected. CONSTITUTION: An insulating film 22 is laminated on the surface of a first wiring layer formed on a silicon substrate 20, and a contact hole (connection hole) is formed in the insulating film such that the surface of the first wiring layer is exposed. A predetermined thickness poly Si film is formed on a bottom surface and a side wall of the connection hole and the surface of the insulating film, and a photosensitive film pattern is formed on a bottom surface part of the connection hole, and the poly Si film exposed through the photosensitive film pattern is removed and the pattern is removed. A first metal film 28 is formed on the whole surface of the Si substrate including the side wall and bottom surface of the connection hole, and then heat-treated to bring the poly Si film and the first metal film into a reaction and hence form a metal silicide film 30 on the bottom surface part of the connection hole. A second metal such as W and Al is buried in the connection hole from which a non-reaction metal film is removed to form, a metal plug 32, and further an Al alloy is deposited on the surfaces of the metal plug and the insulating film 22 to form a metal wiring layer 34.</p> |
