| 摘要 |
PURPOSE:To provide a manufacturing method of a quantum box which has a small size and can be manufactured easily. CONSTITUTION:On a GaAs semiconductor substrate 13, a ZnS0.05Se0.95 buffer layer is made to grow in a crystallizing way. Thereafter, Zn0.75Cd0.25S0.05Se0.95 well layers 12 of 8nm in film thickness and ZnS0.05Se0.95 barrier layers 11 of 20nm in film thickness are made to grow alternately each in ten layers. On the upper part of the thin film obtained after these growths, gold fine particles 14 are stuck by sputtering. Subsequently, using the gold fine particles 14 as masks, the foregoing multilayer thin film is etched by the reactive ion etching using an ethane gas wherein the thin film is diluted with a hydrogen gas, and thereby, a quantum box is manufactured. |
