| 摘要 |
PURPOSE:To enhance the reliability as well as the light emission efficiency by specifying the switching temperature at the time of growth of pn interface between a p-type active layer and an n-type window layer. CONSTITUTION:An AlGaAs based red LED having DH structure comprises three epitaxial layers of a p--type AlGaAs clad layer 7, a p-type AlGaAs active layer 6, and an n-type AlGaAs window layer 1 formed on a p-type GaAs substrate 3 with an n-type electrode 4 and a p-type electrode 5 being formed, respectively, on the surface and the rear. In this regard, Mg is employed as a p- typedopant in the p-type epitaxial layer and the pn interface switching temperature is set in the range of 750-860 deg.C. High intensity emission and high reliability can be satisfied by substituting Mg for Zn as a p-type dopant and simply limiting the switching temperature of pn interface thus realizing an inexpensive LED having good characteristics. |
