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发明名称
SILICON CARBIDE SEMICONDUCTOR AND FILM FORMATION METHOD THEREOF
摘要
申请公布号
JPH06310440(A)
申请公布日期
1994.11.04
申请号
JP19930098232
申请日期
1993.04.26
申请人
FUJI ELECTRIC CO LTD
发明人
OGINO SHINJI
分类号
C30B25/18;C30B29/36;H01L21/205;(IPC1-7):H01L21/205
主分类号
C30B25/18
代理机构
代理人
主权项
地址
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