| 摘要 |
PURPOSE:To simplify a bit contact hole making process by requiring no mask for patterning a polysilicon layer on the third layer. CONSTITUTION:An oxide film 1, first polysilicon 2, a first interlayer film 3, second polysilicon 4, and third polysilicon 5 are formed on a substrate and then a second interlayer film 6 is formed on the third polysilicon 5 which is not yet patterned. Using resist, the second interlayer film 6 is patterned. Using this same resist, the third polysilicon 5 is removed and the whole surface of the substrate is covered with the third interlayer film 8. A part of the second and the third interlayer film 6, 8 and the third polysilicon 5 under the second and the third interlayer film 6, 8, which is a bit contact formation region, is patterned to form a hole for bit contact. Then, the whole surface of the substrate including an inner face of the hole is covered with a fourth interlayer film 9. After that, the fourth interlayer film 9 is patterned and a part of the first interlayer film 8 under the fourth interlayer film 9 is opened to form a bit contact 13. |
