| 摘要 |
PURPOSE:To provide an SiC LED element in which light can be taken out sufficiently from the p-type SiC side. CONSTITUTION:The silicon carbide LED element comprises an n-type SiC layer 2, a p-type SiC layer 3, and a p-type side ohmic electrode 4 formed sequentially on an n-type SiC single crystal substrate 1, wherein the p-type side ohmic electric electrode 4 is formed such that the p-type SiC layer 3 is partially exposed in the outline region P thereof. |
