| 摘要 |
PURPOSE:To obtain a photosensitive resin composition capable of forming a sharp negative type relief pattern and small in decrease of film thickness at the time curing by baking and superior in adhesion to a substrate. CONSTITUTION:The photosensitive resin composition comprises a compound to be allowed to generate an acid by irradiation with light and at least one kind of polyimido precursor selected from a group comprising a silicon- containing polyimido precursor (a) obtained from tetracarboxylic acid dianhydride, diamine, and an aminosilicon compound represented by the formula: H2N-R<1>-SiR<2>s-kXk [R<1> is -(CH2)5- or the like; s is an integer of 1-4: R<2> is 1-6C alkyl or the like; X is hydrolyzable alkoxy; and 1<=k<=3], a silicon-containing polyamido acid ester (b) obtained further by esterifying (a) by a mono-valent saturated alcohol, and a silicon-containing partially esterified polyamido acid ester obtained further by partially esterifying (b). |
